Electrical Conductivity of Silicon Semiconductors

This Demonstration shows the charge carrier concentration in silicon (Si) and doped Si (n- and p-types) as a function of temperature and dopant concentration. The corresponding electron band configurations are shown to the right of the plot. Phosphorous doping creates n-type Si, while boron doping creates p-type Si.


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The intrinsic carrier concentration () is:
where is the effective density of states (), is the energy gap (eV), is Boltzmann's constant (eV/K), is temperature (K), and is the effective density of states at 300 K.
The carrier concentration for pure silicon () is:
The carrier concentration for doped silicon () is:
where is the atomic concentration of dopant atoms, is the activation energy for the electron of a dopant atom, and is the ideal gas constant.
All carrier concentration are in units of .
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