Transient Response of a Semiconductor Laser![]() Snapshot 1: Transient response of the laser for = 0.7 and =0.8 (below the threshold current =1). The photon density is very low (spontaneous emission) and the carrier density builds up to a value lower than threshold carrier density =1.Snapshot 2: Transient response of the laser for =0.7 and =1.05 (slightly above threshold). The photon density is higher compared to Snapshot 1 and the carrier density builds up towards 1.Snapshot 3: Transient response of the laser for =0.7 and (above threshold) . The photon density increases sharply when the carrier density reaches threshold. The time delay between the rising edge of the current step and the stimulated emission is around 1. Relaxation oscillations are due to interaction between electrons and photons. An increase of the photon density induces a reduction of the carrier density which in turn causes a decrease of the optical gain, resulting in a reduction of the photon density. Snapshot 4: Transient response of the laser for =0.98 and =1.15. The carrier density reaches threshold earlier, compared to Snapshot 3, resulting in an almost zero time delay between the rising edge of the current step and the stimulated emission. Snapshot 5: Transient response of the laser in the case of low damping (0.0002) of the relaxation oscillations. The relaxation oscillations frequency is roughly proportional to ; =0.8 and =1.3.Snapshot 6: Transient response of the laser in the case of strong damping (0.001) of the relaxation oscillations; =0.8 and =1.3.P. Brosson, Semiconductor Lasers and Integrated Devices. See Semiconductor Lasers operating principle (PDF) and High Speed Lasers (PDF) on the author's website for more information. ![]() "Transient Response of a Semiconductor Laser" from The Wolfram Demonstrations Project http://demonstrations.wolfram.com/TransientResponseOfASemiconductorLaser/ Contributed by: Philippe Brosson |



































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